An important challenge in the field of three-dimensional ultrafast laser processing is to achieve permanent modifications in the bulk of silicon and narrow-gap materials. Recent attempts by increasing the energy of infrared ultrashort pulses have simply failed. Here, we establish that it is because focusing with a maximum numerical aperture of about 1.5 with conventional schemes does not allow overcoming strong nonlinear and plasma effects in the pre-focal region. We circumvent this limitation by exploiting solid-immersion focusing, in analogy to techniques applied in advanced microscopy and lithography. By creating the conditions for an interaction with an extreme numerical aperture near 3 in a perfect spherical sample, repeatable femtosecond optical breakdown and controllable refractive index modifications are achieved inside silicon. This opens the door to the direct writing of three-dimensional monolithic devices for silicon photonics. It also provides perspectives for new strong-field physics and warm-dense-matter plasma experiments.

The metrology of laser-induced damage usually finds a single transition from 0% to 100% damage probability when progressively increasing the laser energy in experiments. We observe that picosecond pulses at 2-µm wavelength focused inside silicon provide a response that strongly deviates from this. Supported by nonlinear propagation simulations and energy flow analyses, we reveal an increased light delocalization for near critical power conditions. This leads to a nonmonotonic evolution of the peak delivered fluence as a function of the incoming pulse of the energy, a situation more complex than the clamping of the intensity until now observed in ultrafast regimes. Compared to femtosecond lasers, our measurements show that picosecond sources lead to reduced thresholds for three-dimensional (3D) writing inside silicon that is highly desirable. However, strong interplays between nonlinear effects persist and should not be ignored for the performance of future technological developments. We illustrate this aspect by carefully retrieving from the study the conditions for a demonstration of 3D data inscription inside a silicon wafer.

Direct three-dimensional (3D) laser writing of waveguides is highly advanced in a wide range of bandgap materials, but has no equivalent in silicon so far. We show that nanosecond laser single-pass irradiation is capable of producing channel micro-modifications deep into crystalline silicon. With an appropriate shot overlap, a relative change of the refractive index exceeding 10^-3 is obtained without apparent nonuniformity at the micrometer scale. Despite the remaining challenge of propagation losses, we show that the created structures form, to the best of our knowledge, the first laser-written waveguides in the bulk of monolithic silicon samples. This paves the way toward the capability of producing 3D architectures for the rapidly growing field of silicon photonics.

Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications.

Ultrafast laser welding is a fast, clean, and contactless technique for joining a broad range of materials. Nevertheless, this technique cannot be applied for bonding semiconductors and metals. By investigating the nonlinear propagation of picosecond laser pulses in silicon, it is elucidated how the evolution of filaments during propagation prevents the energy deposition at the semiconductor–metal interface. While the restrictions imposed by nonlinear propagation effects in semiconductors usually inhibit countless applications, the possibility to perform semiconductor–metal ultrafast laser welding is demonstrated. This technique relies on the determination and the precompensation of the nonlinear focal shift for relocating filaments and thus optimizing the energy deposition at the interface between the materials. The resulting welds show remarkable shear joining strengths (up to 2.2 MPa) compatible with applications in microelectronics. Material analyses shed light on the physical mechanisms involved during the interaction.

International audienceCarrier kinetics in the density range of N = 10(17) - 10(20) cm(-3) is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-mu m femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient D-a of 2.5 cm(2) s(-1) and an effective carrier lifetime tau(eff) of 2.5 ns at room temperature. A discussion on our findings at these high-injection levels is presented. (C) 2016 AIP Publishing LLC

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In our study, the laser-induced damage densities on a fused silica surface produced by multiple longitudinal mode (MLM) pulses are found to be higher than those produced by single longitudinal mode pulses at 1064 nm. This behavior is explained by the enhancement of the three-photon absorption due to the intensity spikes related to longitudinal mode beating. At 355 nm, the absorption is linear and an opposite behavior occurs. It can be explained with the help of a process involving thermomechanics coupled with the fine time structure of MLM pulses, leading to the possible annealing of part of the absorbent defects.